Abstract

The feasibility of creating a high-power wideband source of chaotic microwave signals that is constructed around a single high-power bipolar transistor has been demonstrated for the first time. This has become possible after implementing a selected-inertia oscillator. Theoretical calculations supporting the idea of fabricating such an oscillator are presented. A hybrid integrated prototype of a selected-inertia chaotic oscillator that is based on a 2T982A-2 high-power transistor has been designed. The feasibility of generating chaotic microwave signals with a center frequency of 4.55 GHz and an overall power of 1.1 W has been proved. The effective width of the chaotic signal power spectrum equals 11% at a spectral characteristic ripple of 3 dB, the spectral density of noise oscillations is 2.2 × 10^–3 W/MHz, and the e1fficiency is 15%.

中文翻译：

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具有选定惯性的基于双极晶体管的大功率混沌振荡器

摘要

首次证明了围绕单个高功率双极晶体管构建高功率宽带混沌微波信号源的可行性。在实现选择惯性振荡器之后，这已成为可能。提出了支持制造这种振荡器的思想的理论计算。设计了基于2T982A-2大功率晶体管的选择惯性混沌振荡器的混合集成原型。已经证明生成中心频率为4.55 GHz且总功率为1.1 W的混沌微波信号的可行性。在3 dB的频谱特征纹波下，混沌信号功率谱的有效宽度等于11％，噪声振荡的频谱密度为2.2×10 ^–3 W / MHz，效率为15％。