Oxygen‐polar (O‐polar) and nonpolar ZnO‐based UV photodetectors (PDs) are fabricated using a sol–gel (SG) method on polarity‐controlled ZnO seed layers grown by atomic layer deposition (ALD). O‐polar c‐plane and nonpolar a‐plane ZnO films grown using the SG process are obtained using ALD‐grown ZnO seed layers on c‐plane and r‐plane sapphire substrates, respectively. In addition, the photoluminescence intensity of the O‐polar c‐plane ZnO film is higher than that of the nonpolar a‐plane ZnO film owing to the introduction of the ZnO seed layer. Therefore, the resulting photocurrent of the O‐polar c‐plane ZnO PD is higher than that of the nonpolar a‐plane ZnO PD. Furthermore, regardless of the crystal polarity, the carrier concentration and the mobility of the ZnO film deposited using the SG method significantly increase because of the ZnO seed layer. In particular, the carrier concentration of the nonpolar a‐plane ZnO film is 2.5 times higher than that of the O‐polar c‐plane ZnO film. Therefore, the time‐dependent photoresponsivity of the nonpolar a‐plane ZnO PD is faster than that of the O‐polar c‐plane ZnO PD. These results indicate that the ZnO seed layers can effectively control the crystal polarity of ZnO films grown using the SG method.

中文翻译：

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通过溶胶-凝胶工艺生长的高光电流和快速响应的极性控制的基于ZnO的紫外光电探测器

使用溶胶-凝胶（SG）方法在通过原子层沉积（ALD）生长的极性受控的ZnO晶种层上制备了基于氧的（O-极性）和基于ZnO的非极性UV光电探测器（PDs）。使用SG工艺生长的O极性c平面和非极性a平面ZnO薄膜分别使用在c平面和r平面蓝宝石衬底上的ALD生长的ZnO籽晶层获得。此外，由于引入了ZnO种子层，O极性c平面ZnO薄膜的光致发光强度高于非极性a平面ZnO薄膜的光致发光强度。因此，O极c平面ZnO PD的最终光电流高于非极性一个-平面氧化锌PD。此外，不管晶体极性如何，由于ZnO种子层，使用SG方法沉积的ZnO膜的载流子浓度和迁移率都显着增加。特别是，非极性a平面ZnO薄膜的载流子浓度是O极性c平面ZnO薄膜的载流子浓度的2.5倍。因此，非极性a平面ZnO PD的随时间变化的光响应性要快于O极性c平面ZnO PD的随时间变化的光响应性。这些结果表明，ZnO籽晶层可以有效地控制使用SG法生长的ZnO膜的晶体极性。