The Computing-in-Memory (CiM) is one of the best solutions to overcome the data transferring limitation between memory and processor. Moreover, spintronics based devices such as spin-transfer torque magnetic memory (STTM) and spin-orbit torque magnetic memory (SOTM) are emerging as viable contenders for CiM applications. SOTM along with their driving CMOS counterparts show a huge reduction in area and add nonvolatility to CiM designs. In this work, energy-efficient CiM working is performed using Voltage-Controlled SOTM (V-SOTM) where logic operations are implemented within the memory array. The operational conditions and working for performing logic within the memory blocks are elaborated in detail. Further, V-SOTM based full adder (FA) for CiM is presented. Performance analysis has been carried out and compared with exiting CMOS, STTM, SOTM based FA. V-SOTM FA shows 53.98% and 2.7% reduction in logic power and data transfer energy, respectively when compared to SOTM based CiM FA. Furthermore, the VCMA voltage variations for V-SOTM FA is carried out that provide performance improvement with varying voltage pulse. Finally, the effect of parametric variations is carried out using Monte Carlo analysis.

内存中计算（CiM）是克服内存和处理器之间数据传输限制的最佳解决方案之一。此外，基于自旋电子学的设备，例如自旋传递扭矩磁存储器（STTM）和自旋轨道扭矩磁存储器（SOTM），正在成为CiM应用的可行竞争者。SOTM及其驱动的CMOS器件显示出面积的极大减少，并增加了CiM设计的非易失性。在这项工作中，使用电压控制SOTM（V-SOTM）进行节能的CiM工作，其中在存储器阵列内实施逻辑运算。详细说明了存储块内执行逻辑的工作条件和工作。此外，还介绍了基于V-SOTM的CiM全加法器（FA）。进行了性能分析，并将其与现有的CMOS，STTM，基于SOTM的FA。与基于SOTM的CiM FA相比，V-SOTM FA的逻辑功耗和数据传输能量分别降低了53.98％和2.7％。此外，还执行了V-SOTM FA的VCMA电压变化，可通过改变电压脉冲来提高性能。最后，使用蒙特卡洛分析进行参数变化的影响。