Flexible gelatin resistive memory device exhibits a high ON/OFF ratio of over 10⁶. Moreover, the bended gelatin resistive memory device can efficiently heal at room temperature without any external stimulus. This self-healing behavior of gelatin resistive memory device was demonstrated based on the metal chelating ligand. Al ions migrating from the top radio frequency Al electrode contributed to the construction of the metal chelating ligand. The carboxylates of gelatin can form multi-dentate coordination compounds with Al ions, which can restore the memory properties of the gelatin resistive memory device. Thus, Al ion migration from the top Al electrodes plays an important role in self-healing capability. The effect of Al ions on the self-healing mechanism was investigated by using secondary ion mass spectrometry, which is useful for the characterization of Al migration from the top electrode. This capability for restoring the electrical properties of gelatin memory device is desirable for flexible electronics and represents a major step toward self-healable bioelectronics.

柔性明胶电阻存储器件的开/关比高，超过10 ⁶。而且，弯曲的明胶电阻存储器件可以在室温下有效地愈合，而没有任何外部刺激。基于金属螯合配体证明了明胶电阻存储器件的这种自修复行为。从顶部射频Al电极迁移的Al离子有助于金属螯合配体的构建。明胶的羧酸盐可与Al离子形成多齿配位化合物，可恢复明胶电阻存储器件的存储性能。因此，铝离子从顶部的铝电极迁移起自愈能力的重要作用。通过使用二次离子质谱研究了Al离子对自愈机理的影响，这对于表征Al从顶部电极迁移的过程很有用。