Semiconductor lasers based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide and an increased electron barrier layer are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Additional use of strained wide-bandgap layers as blocking barriers limiting electron leakage from the active region makes it possible to increase the output power at the same pump current. The developed lasers with a stripe contact 100 μm wide demonstrate at room temperature an output optical power of 4.0 – 4.4 W (pump current 14 A) in a continuous-wave regime and 15 – 17 W (100 A) in a pulsed regime (100 ns, 1 kHz) at wavelengths of 1450 – 1500 nm.

开发了基于AlGaInAs / InP异质结构的半导体激光器，具有超窄波导和增加的电子势垒层。已经表明，结合使用这种波导和异型掺杂可以确保内部光学损耗和耐热性之间的平衡。应变宽带隙层的额外使用作为限制电子从有源区泄漏的阻挡层，可以在相同的泵浦电流下增加输出功率。已开发的带状接触宽度为100μm的激光器在室温下的连续波状态下的输出光功率为4.0 – 4.4 W（泵电流14 A），而在脉冲状态下的输出光功率为15–17 W（100 A）（100） ns，1 kHz）在1450 – 1500 nm的波长下。