The combination of materials with dissimilar symmetries can induce a large amount of stress at the interfacial layer of films, thereby promoting the appearance of novel properties in related devices. The study of the interfacial state is critical for determining the inner mechanism. In this work, the misfit heterostructure between cubic NiO films and wurtzite ZnO is investigated. A NiO film grown using molecular beam epitaxy on a ZnO substrate shows a highly (100)-oriented texture featuring three domains with a rotation angle of 30 °, which is in agreement with first principles calculations. Misfit-induced dislocations and lattice distortions within the interfacial layers of the NiO film give rise to interfacial electronic states, which are different from those in bulk; these electronic states are analyzed by in situ synchrotron-based x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, x-ray absorption spectroscopy, and ex situ electron energy loss spectroscopy. Additionally, the origin of these interfacial states is discussed. This work aims to provide insights for the integration of semiconducting hexagonal ZnO with other functional materials that have a cubic symmetry. Additionally, we investigate the integration of photon and electron-based techniques to explore the interfacial states of complex interfaces, which is an important aspect of material science.

中文翻译：

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六角形ZnO和立方NiO之间错配异质结构的界面电子态

具有不同对称性的材料的组合可在膜的界面层处引起大量应力，从而促进相关装置中新颖性质的出现。界面状态的研究对于确定内部机理至关重要。在这项工作中，研究了立方NiO薄膜和纤锌矿型ZnO之间的失配异质结构。使用分子束外延在ZnO衬底上生长的NiO膜显示出高度（100）取向的纹理，具有三个畴，旋转角为30°，这与第一原理计算一致。NiO薄膜界面层中的失配引起的位错和晶格畸变会产生界面电子态，这与本体态不同。这些电子状态通过原位分析基于同步加速器的X射线光电子能谱，紫外光电子能谱，X射线吸收能谱和非原位电子能量损失能谱。另外，讨论了这些界面状态的起源。这项工作旨在为半导体六角形ZnO与具有立方对称性的其他功能材料的集成提供见解。此外，我们研究了基于光子和电子的技术的集成，以探索复杂界面的界面状态，这是材料科学的重要方面。