Bias-emission voltage and dose-dependent current gain is a key parameter in detecting the physical properties of the bipolar transistor. The first objective of this work is to measure the influences of gamma radiation on current gain in lateral PNP bipolar transistors. Substantial differences of the current gain as a function of voltage between bias and emission are observed. Then, based on the calculated results from the non-linear curve fitting method, the voltage between bias and emission-dependent current gain is theoretically explained successfully via the asymmetric peak function. The simulations agree very well with the observed curves (current gain versus voltage). The minimum correlation coefficient between the experimental and calculated data is 0.998. The average relative errors between the measured and modeled values do not exceed 9.14% in all considered cases. Finally, the mathematical relationships between the parameters, which serve to link the current gain and voltage together with dose, are obtained. Consequently, the current gain can be predicted by both voltage between bias and emission and dose using only one function. To the best knowledge of the author, the effects of gamma irradiation on the lateral PNP transistors are quantitatively discussed for the first time in current gain.

偏压发射电压和剂量相关的电流增益是检测双极晶体管物理特性的关键参数。这项工作的第一个目的是测量横向PNP双极晶体管中伽马辐射对电流增益的影响。观察到电流增益随偏压和发射之间的电压变化而存在很大差异。然后，基于非线性曲线拟合方法的计算结果，通过不对称峰值函数在理论上成功地解释了偏置和依赖于发射的电流增益之间的电压。模拟与观察到的曲线非常吻合（电流增益与电压的关系）。实验数据和计算数据之间的最小相关系数为0.998。测量值和建模值之间的平均相对误差不超过9。在所有考虑的情况下为14％。最后，获得了参数之间的数学关系，这些参数将电流增益和电压与剂量联系在一起。因此，仅使用一个函数就可以通过偏置和发射之间的电压以及剂量来预测电流增益。据作者所知，伽马辐照对横向PNP晶体管的影响首次在电流增益方面进行了定量讨论。