This article demonstrates that ZnO can be used both as the insulating dielectric and the channel by appropriately mixing with lithium and indium, respectively. The ion-conducting lithium zinc oxide (Li2ZnO2) as the dielectric and indium zinc oxide (IZO) as the channel used to fabricate thin-film transistors operating in accumulation mode are derived using the solution-processable method. The novelty of the structure is that both dielectric and channel are made up of ZnO, which provide the possibility of least interface trap states with very high capacitive coupling (318 nF/cm2) makes the device more attractive for low power electronics. The fabricated devices exhibit low operational voltage (≤2V) with high carrier mobility. Indium doped-ZnO is a large-bandgap material that can be utilized for narrowband UV-B (310 nm) detection, for narrowband phototherapy to treat certain skin diseases.

中文翻译：

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一种提议的用于 UV-B 检测的全 ZnO 基薄膜晶体管

本文证明，通过分别与锂和铟适当混合，ZnO 既可以用作绝缘电介质，也可以用作通道。离子导电的氧化锌锂 (Li2ZnO2) 作为电介质和氧化铟锌 (IZO) 作为用于制造以累积模式运行的薄膜晶体管的通道是使用可溶液处理的方法导出的。该结构的新颖之处在于电介质和通道均由 ZnO 组成，这提供了最少界面陷阱态和非常高的电容耦合 (318 nF/cm2) 的可能性，使该器件对低功率电子设备更具吸引力。制造的器件表现出低工作电压（≤2V）和高载流子迁移率。铟掺杂的 ZnO 是一种宽带隙材料，可用于窄带 UV-B (310 nm) 检测，