ABSTRACT

In this paper to compare the growth and optoelectronic properties of copper oxide (CuO) materials suitable for advanced application, CuO layers were synthesized on glass and SnO₂:F). The X-ray diffraction analysis showed that CuO nanoparticles were formed in pure monoclinic structure where crystallite size decreases from 37.39 to 33.44 nm when the substrate changed, respectively, from glass to SnO₂:F/glass. This crystallite size reduction was related to the energy band gap (Eg) enlargement from 1.455 to 1.525 eV due to the quantum confinement effect. Eg values were almost equal to the theoretical one for converting solar energy into electrical energy and CuO may be used as an absorber material in photovoltaic devices. Electrical characteristics were studied using the impedance spectroscopy technique at room temperature and confirmed by the Hall Effect measurements. CuO/SnO₂:F/glass thin films have best electrical parameters and consequently the Ag/ZnO:Sn(n)/CuO(p)/SnO₂:F photocell was elaborated and its J-V characteristics were analyzed.

摘要

为了比较适合先进应用的氧化铜（CuO）材料的生长和光电性能，本文在玻璃和SnO ₂：F上合成了CuO层。X射线衍射分析表明，当基底从玻璃变为SnO ₂时，CuO纳米颗粒以纯单斜晶结构形成，其中微晶尺寸从37.39 nm减小至33.44 nm。：F /玻璃。由于量子限制效应，这种微晶尺寸的减小与能带隙（Eg）从1.455eV增大到1.525eV有关。例如，Eg值几乎等于将太阳能转换为电能的理论值，CuO可用作光伏器件中的吸收材料。在室温下使用阻抗谱技术研究了电特性，并通过霍尔效应测量得到了证实。CuO / SnO ₂：F /玻璃薄膜具有最佳的电学参数，因此对Ag / ZnO：Sn（n）/ CuO（p）/ SnO ₂：F光电电池进行了精细加工并对其合资特性进行了分析。