This paper emphasizes on III-V material based inverted metamorphic triple junction (3J IMM) solar cell as an alter-native to 3J lattice-matched InGaP/GaAs/Ge design (3J LM). 1-sun AM0 efficiency is obtained to be 7% higher for the proposed 3J IMM InGaP/GaAs/In_0.30Ga_0.70As design compared to the experimental 3J LM solar cell. The mi- nority carrier lifetime as a function of threading dislocation density (TDD) is presented for p-In_0.30Ga_0.70As material. The influence of TDD in the buffer and the bottom In_0.30Ga_0.70As subcell on the device characteristics is presented and analyzed. In addition to TDD, the degradation of solar cell output parameters is plotted as a function of trap concentration by considering irradiation-induced deep level traps. We compared the degradation tendencies of short circuit current density J_sc, open circuit voltage V_oc, and efficiency of 3J IMM and 3J LM solar cells with respect to trap concentration. This analysis became possible by defining trap related parameters and the corresponding carrier lifetime changes using the crosslight APSYS tool. In addition to superior radiation resistance, the proposed device has shown 4% higher efficiency compared to 3J LM device even with the inclusion of non-idealities such as surface recombination velocity, TDD, and trap concentration.

本文重点介绍基于III-V材料的倒置变质三结（3J IMM）太阳能电池，作为3J晶格匹配InGaP / GaAs / Ge设计（3J LM）的替代产品。与实验的3J LM太阳能电池相比，拟议的3J IMM InGaP / GaAs / In _0.30 Ga _0.70 As设计的1-sun AM0效率提高了7％。对于p-In _0.30 Ga _0.70 As材料，提出了微小载流子寿命与螺纹位错密度（TDD）的函数关系。TDD对缓冲器和底部In _0.30 Ga _{0.70的影响}作为设备上的子单元，将介绍并分析其特性。除TDD外，还通过考虑辐照引起的深能级陷阱，将太阳能电池输出参数的退化绘制为陷阱浓度的函数。我们比较了短路电流密度J _sc和开路电压V _oc的退化趋势。，以及3J IMM和3J LM太阳能电池相对于陷阱浓度的效率。通过使用crosslight APSYS工具定义陷阱相关参数和相应的载流子寿命变化，可以进行此分析。除了出色的抗辐射性，与3J LM器件相比，所提出的器件还显示出4％的效率，即使包括表面重组速度，TDD和陷阱浓度等非理想因素。