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Interpretation of the 1/C2 Curvature and Discontinuity in Electrochemical Capacitance Voltage Profiling of Heavily Ga Implanted SiGe Followed by Melt Laser Annealing
ECS Journal of Solid State Science and Technology ( IF 2.2 ) Pub Date : 2020-12-03 , DOI: 10.1149/2162-8777/abcd09
B. Sermage 1 , T. Tabata 2 , J. Ren 1 , G. Priante 1 , Y. Gao 1
Affiliation  

Electrochemical Capacitance Voltage Profiling (ECVP) is one of the most widely used characterization methods in semiconductor industry to measure the activation of dopants in doped semiconductor materials owing to its low-cost and easy-to-use features. Today, there are some specific industrial needs, for instance reduction of the contact resistance in advanced transistors, for which heavily-doped semiconductor materials must be implemented. A clear challenge addressed to ECVP here is that the interpretation of measured data becomes much more complex in such materials because of the appearance of curvatures and discontinuity on the curve given by the inverse of the square of the capacitance within the space charge zone as a function of the applied polarisation voltage. In this paper, we present a case of silicon-germanium doped by heavy gallium ion-implantation and annealed by melt laser annealing, where a metastable dopant activation can be expected. We develop a fitting model with different deep levels, highlighting their possibly different time constants to provide a more reliable interpretation on the measurements.



中文翻译:

1 / C 2曲率和间断性在重Ga注入的SiGe的电化学电容电压谱分析中的应用,然后进行熔融激光退火

电化学电容电压曲线分析(ECVP)由于其低成本和易于使用的特性,是半导体工业中用来测量掺杂半导体材料中掺杂剂活化程度的最广泛使用的表征方法之一。如今,存在一些特殊的工业需求,例如降低先进晶体管的接触电阻,为此必须采用重掺杂半导体材料。这里针对ECVP的一个明确挑战是,由于空间电荷区内的电容平方的平方与函数成反比,曲线上出现曲率和不连续性,因此在这种材料中对测量数据的解释变得更加复杂施加的极化电压的 在本文中,我们介绍了一种通过重镓离子注入掺杂锗硅并通过熔融激光退火进行退火的案例,其中可以预期亚稳态掺杂剂的活化。我们开发了一个具有不同深度级别的拟合模型,突出了它们可能不同的时间常数,以提供对测量的更可靠解释。

更新日期:2020-12-03
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