ABSTRACT

In this problem, the coupled between magnetic field and thermal-elastic-plasma waves is studied. The governing equations are taken during photothermal excitation on a surface of semiconductor medium. The medium is exposed to weak external magnetic field during the refined multi-phase-lags of thermal relaxation times. The microelements (microtemperatures) possess due to microstructure of the semiconductor medium is investigated. The normal mode method is applied in one dimension (semiconductor rod) to obtain the main physical fields in this phenomenon for this microtemperature field. The surface is shocked by heating (thermal shock problem) and applying the free traction on its outer surface (mechanical boundary) through transport (diffusion) process of temperature to observe the analytical complete expressions of the main physical fields. The silicon (Si) material is used to make a simulation and obtain the numerical results. The basic physical field quantities are graphed and discussed.

摘要

在这个问题中，研究了磁场与热弹性等离子体波之间的耦合。控制方程是在半导体介质表面上的光热激发过程中得到的。在热弛豫时间的细化多相滞后期间，介质暴露于微弱的外部磁场。研究了由于半导体介质的微观结构而具有的微元素（微温度）。在一维（半导体棒）中应用正常模式方法，以获得该微温场在该现象中的主要物理场。表面受到加热冲击（热冲击问题），并通过温度的传输（扩散）过程对其外表面（机械边界）施加自由牵引力，以观察主要物理场的解析完整表达式。使用硅（Si）材料进行模拟并获得数值结果。绘制并讨论了基本的物理场量。