Abstract In/Si(111)-( 7 × 3 ) is an atomic layer superconductor formed by an In double layer on Si(111). The size of its circular Fermi surface becomes smaller by the adsorption of copper-phthalocyanine (CuPc) molecules till a coverage of 1.0 monolayer, and then larger at higher coverage. This means that it is possible to control the amount of hole doping, and therefore to tune the energy of the band by CuPc adsorption. By comparing the change in transition temperature ( T c ) reported in “Nano Lett. 17 (2017) 2287”, whose reports the manipulation of T c by CuPc adsorption, and the behavior of the Fermi surface observed in the present study, we conclude that both the increase of T c till a CuPc coverage of 1.0 ML and its decrease from 1.0 to 2.0 ML have strong correlations with the amount of hole doping from CuPc to In/Si(111)-( 7 × 3 ).

中文翻译：

---

通过CuPc吸附调整In/Si(111)-(7×3)的费米面

摘要 In/Si(111)-( 7 × 3 )是在Si(111)上形成In双层的原子层超导体。通过吸附铜酞菁 (CuPc) 分子，其圆形费米表面的尺寸变小，直至覆盖 1.0 单层，然后在更高的覆盖率下变大。这意味着可以控制空穴掺杂量，从而通过 CuPc 吸附来调整能带的能量。通过比较“Nano Lett. 17 (2017) 2287”，其报告了通过 CuPc 吸附对 T c 的操纵，以及在本研究中观察到的费米表面的行为，我们得出结论，T c 增加直至 CuPc 覆盖率达到 1.0 ML 并且其降低从 1.0 到 2.0 ML 与从 CuPc 到 In/Si(111)-( 7 × 3 ) 的空穴掺杂量有很强的相关性。