Purpose

The purpose of this paper is to present an improved model based on center potential instead of surface potential which is physically more relevant and accurate. Also, additional analytic insights have been provided to make the model independent and robust so that it can be extended to a full range compact model.

Design/methodology/approach

The design methodology used is center potential based analytical modeling using Psuedo-2D Poisson equation, with ingeniously developed boundary conditions, which help achieve reasonably accurate results. Also, the depletion width calculation has been suitably remodeled, to account for proper physical insights and accuracy.

Findings

The proposed model has considerable accuracy and is able to correctly predict most of the physical phenomena occurring inside the broken gate Tunnel FET structure. Also, a good match has been observed between the modeled data and the simulation results. I_on/I_ambipolar ratio of 10^(−8) has been achieved which is quintessential for low power SOCs.

Originality/value

The modeling approach used is different from the previously used techniques and uses indigenous boundary conditions. Also, the current model developed has been significantly altered, using very simple but intuitive technique instead of complex mathematical approach.

中文翻译：

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基于双金属断栅 TFET 的新型中心电位分析亚阈值模型

目的

本文的目的是提出一种基于中心电势而不是表面电势的改进模型，该模型在物理上更加相关和准确。此外，还提供了额外的分析见解，使模型独立且稳健，从而可以扩展到全系列紧凑模型。

设计/方法论/途径

所使用的设计方法是使用 Psuedo-2D Poisson 方程进行基于中心势的分析建模，并具有巧妙开发的边界条件，有助于获得相当准确的结果。此外，耗尽宽度计算已进行了适当的重新建模，以考虑适当的物理见解和准确性。

发现

所提出的模型具有相当高的精度，能够正确预测断栅隧道 FET 结构内发生的大部分物理现象。此外，建模数据和模拟结果之间也观察到良好的匹配。I _on /I_双极比率已达到 10^(−8)，这对于低功率 SOC 来说是典型的。

原创性/价值

所使用的建模方法与以前使用的技术不同，并使用固有的边界条件。此外，当前开发的模型已经发生了重大改变，使用非常简单但直观的技术而不是复杂的数学方法。