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Foliar application of silicon improves growth of soybean by enhancing carbon metabolism under shading conditions
Plant Physiology and Biochemistry ( IF 6.5 ) Pub Date : 2020-12-05 , DOI: 10.1016/j.plaphy.2020.11.053
Sajad Hussain , Maryam Mumtaz , Sumaira Manzoor , Li Shuxian , Irshan Ahmed , Milan Skalicky , Marian Brestic , Anshu Rastogi , Zaid Ulhassan , Iram Shafiq , Suleyman I. Allakhverdiev , Haris Khurshid , Wenyu Yang , Weiguo Liu

An experiment was set up to investigate physiological responses of soybeans to silicon (Si) under normal light and shade conditions. Two soybean varieties, Nandou 12 (shade resistant), and Nan 032–4 (shade susceptible), were tested. Our results revealed that under shading, the net assimilation rate and the plant growth were significantly reduced. However, foliar application of Si under normal light and shading significantly improved the net photosynthetic rate (Pn), stomatal conductance (Gs), transpiration rate (Tr), and decreased intercellular carbon dioxide concentration (Ci). The net photosynthetic rate of Nandou 12 under normal light and shading increased by 46.4% and 33.3% respectively with Si treatment (200 mg/kg) compared to controls. Si application also enhanced chlorophyll content, soluble sugars, fresh weight, root length, root surface area, root volume, root-shoot ratio, and root dry weight under both conditions. Si application significantly increased the accumulation of some carbohydrates such as soluble sugar and sucrose in stems and leaves ensuring better stem strength under both conditions. Si application significantly increased the yield by increasing the number of effective pods per plant, the number of beans per plant and the weight of beans per plant. After Si treatment, the yield increased 24.5% under mono-cropping, and 17.41% under intercropping. Thus, Si is very effective in alleviating the stress effects of shading in intercropped soybeans by increasing the photosynthetic efficiency and lodging resistance.



中文翻译:

叶面施用硅可通过在遮荫条件下增强碳代谢来改善大豆的生长

建立了一个实验来研究大豆在正常的光照和阴影条件下对硅的生理响应。测试了两个大豆品种,Nandou 12(耐荫凉)和Nan 032-4(耐荫凉)。我们的结果表明,在遮荫下,净同化率和植物生长显着降低。然而,在正常光线和阴影下叶面施用Si可以显着提高净光合速率(Pn),气孔导度(Gs),蒸腾速率(Tr)和降低的细胞间二氧化碳浓度(Ci)。与对照相比,施硅处理(200 mg / kg),在正常光照和遮光条件下,南豆12净光合速率分别提高了46.4%和33.3%。施硅还提高了叶绿素含量,可溶性糖,鲜重,根长,两种情况下的根表面积,根体积,根射比和根干重。施硅显着增加了茎和叶中某些碳水化合物(如可溶性糖和蔗糖)的积累,从而确保了在两种条件下的茎强度都更高。硅的施用通过增加每株植物的有效豆荚数,每株植物的豆类数量和每株植物的豆类重量而显着提高了产量。硅处理后,单作时增产24.5%,间作时增产17.41%。因此,Si通过增加光合作用效率和抗倒伏性,在减轻间作大豆的遮光作用方面非常有效。施硅显着增加了茎和叶中某些碳水化合物(如可溶性糖和蔗糖)的积累,从而确保了在两种条件下的茎强度都更高。硅的施用通过增加每株植物的有效豆荚数,每株植物的豆子数量和每株植物的豆子重量而显着提高了产量。硅处理后,单作时增产24.5%,间作时增产17.41%。因此,Si通过增加光合作用效率和抗倒伏性,在减轻间作大豆的遮光作用方面非常有效。施硅显着增加了茎和叶中某些碳水化合物(如可溶性糖和蔗糖)的积累,从而确保了在两种条件下的茎强度都更高。硅的施用通过增加每株植物的有效豆荚数,每株植物的豆子数量和每株植物的豆子重量而显着提高了产量。硅处理后,单作时增产24.5%,间作时增产17.41%。因此,Si通过增加光合作用效率和抗倒伏性,在减轻间作大豆的遮光作用方面非常有效。单株豆的数量和单株豆的重量。硅处理后,单作时增产24.5%,间作时增产17.41%。因此,Si通过增加光合作用效率和抗倒伏性,在减轻间作大豆的遮光作用方面非常有效。单株豆的数量和单株豆的重量。硅处理后,单作时增产24.5%,间作时增产17.41%。因此,Si通过增加光合作用效率和抗倒伏性,在减轻间作大豆的遮光作用方面非常有效。

更新日期:2020-12-15
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