Laser-assisted atom probe tomography was used to identify the impurity distribution in Si heterojunction (SHJ) solar cells composed of thin doped/intrinsic amorphous Si layers on the textured surface of a crystalline Si wafer. A site-specific lift-out technique involving a focused ion beam enabled the selection of a ∼2נ2μm² area on an arbitrary pyramidal surface. The distributions of B, P and C in the amorphous Si layers introduced by p-type (trimethyl-borane or diborane) or n-type (phosphine) dopant gases were investigated. Standard guidelines for the assessment of the H content in amorphous Si of SHJ solar cells were provided.

中文翻译：

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原子探针层析成像技术检测到的组成结构化硅异质结太阳能电池的掺杂/本征非晶硅层的3D杂质分布

激光辅助原子探针层析成像技术可用于识别由晶体硅晶片纹理表面上的薄掺杂/本征非晶硅层组成的硅异质结（SHJ）太阳能电池中的杂质分布。涉及的聚焦离子束A位点特异性顶出技术启用~2נ2的选择μ中号²上的任意的锥体表面区域。研究了通过p型（三甲基硼烷或乙硼烷）或n型（磷化氢）掺杂气体引入的非晶硅层中B，P和C的分布。提供了用于评估SHJ太阳能电池非晶硅中H含量的标准指南。