This Letter presents a millimetre-wave CMOS oscillator, which achieves 4.9 dBm output power with 16% peak power efficiency. A phase noise of − 98 dBc / Hz at 1 MHz offset frequency and 26.7% tuning range around 57.5 GHz centre frequency were verified experimentally. To the best knowledge of the authors, the output power, efficiency, and phase noise performance are the best among fundamental CMOS oscillators in the frequency range of interest, while the tuning range is the third highest result reported to date. The circuit occupies a silicon area of ∼ 9000 μ m 2 without the matching inductors on a 22 nm fully depleted silicon on insulator (FD-SOI) CMOS technology.

中文翻译：

---

58 GHz CMOS VCO，效率为 16%

本文介绍了一种毫米波 CMOS 振荡器，可实现 4.9 dBm 的输出功率和 16% 的峰值功率效率。在 1 MHz 偏移频率和 57.5 GHz 中心频率附近 26.7% 的调谐范围内，通过实验验证了 − 98 dBc / Hz 的相位噪声。据作者所知，输出功率、效率和相位噪声性能在感兴趣的频率范围内是基本 CMOS 振荡器中最好的，而调谐范围是迄今为止报告的第三高的结果。在 22 nm 完全耗尽绝缘体上硅 (FD-SOI) CMOS 技术上，该电路占据了约 9000 μm 2 的硅面积，没有匹配的电感器。