A memory state equation consistent with a number of experimental observations is presented and discussed within the framework of Chua's memristive systems theory. The proposed equation describes the evolution of the memory state corresponding to a bipolar resistive switching device subject to a variety of electrical stimuli. It is shown that the memory equation agrees with: i) the characteristic switching time associated with the ion/vacancy hopping mechanism within the dielectric film, ii) the SET/RESET voltage logarithmic dependence on the voltage sweep ramp rate, iii) the hysteretic behavior of the remnant conductance for cycled input signals, iv) the generation of self-similar conductance loops for arbitrary initial conditions, and v) the collapse of the resistive window with the increment of the input signal frequency. It is also shown that the proposed equation admits a circuital representation suitable for circuit simulations.

中文翻译：

---

基于动态平衡模型的双极电阻开关器件的忆阻状态方程及其等效电路表示

在蔡氏忆阻系统理论的框架内，提出并讨论了与许多实验观察一致的记忆状态方程。所提出的方程描述了对应于受到各种电刺激的双极电阻开关器件的记忆状态的演变。结果表明，记忆方程符合：i) 与介电膜内的离子/空位跳跃机制相关的特征切换时间，ii) SET/RESET 电压对电压扫描斜率的对数依赖性，iii) 滞后行为循环输入信号的残余电导，iv) 任意初始条件下自相似电导回路的生成，以及 v) 电阻窗口随着输入信号频率的增加而坍塌。