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54% PAE, 70-W X-Band GaN MMIC Power Amplifier With Individual Source via Structure
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2020-12-01 , DOI: 10.1109/lmwc.2020.3031273
Jun Kamioka , Yukinobu Tarui , Yoshitaka Kamo , Shintaro Shinjo

This letter reports on the development of an ${X}$ -band GaN monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) which achieves a power-added efficiency (PAE) of 54% and an output power of 70 W. Mitsubishi’s GaN field-effect transistors (FETs) with a gate length of 0.15 $\mu \text{m}$ and individual source via (ISV) structure are utilized. The developed GaN MMIC HPA demonstrates an output power of 46.1–47.4 dBm (41–56 W), a PAE of 49–55%, and a gain of 10.1–11.0 dB at the frequency range 8.5–10.5 GHz with a drain voltage of 30 V. Output power of 47.2–48.4 dBm (53–70 W), PAE of 52%–54%, and gain of 11.2–12.1 dB at the frequency of 8.5–10.5 GHz are obtained with a drain voltage of 35 V. The measured performances demonstrate the highest performance in terms of the combinations of output power and PAE compared to existing state-of-the-art ${X}$ -band MMIC HPAs.

中文翻译:

具有独立源通孔结构的 54% PAE、70W X 波段 GaN MMIC 功率放大器

这封信报告了一个 ${X}$ 带 GaN 单片微波集成电路 (MMIC) 高功率放大器 (HPA),功率附加效率 (PAE) 为 54%,输出功率为 70 W。 三菱带栅极的 GaN 场效应晶体管 (FET)长度为 0.15 $\mu \text{m}$ 和单独的源通过 (ISV) 结构被利用。开发的 GaN MMIC HPA 展示了 46.1–47.4 dBm (41–56 W) 的输出功率、49–55% 的 PAE 以及在 8.5–10.5 GHz 频率范围内的 10.1–11.0 dB 增益以及漏极电压为30 V。 47.2–48.4 dBm (53–70 W) 的输出功率、52%–54% 的 PAE 和 8.5–10.5 GHz 频率下的 11.2–12.1 dB 增益是在 35 V 的漏极电压下获得的。与现有最先进技术相比,测量的性能表现出在输出功率和 PAE 组合方面的最高性能 ${X}$ -band MMIC HPA。
更新日期:2020-12-01
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