This letter presents the design of an asymmetrical Ka-band single-pole double-throw (SPDT) switch, based on two integrated hybrid couplers. The principle of operation of this switch and its two asymmetrical receiving (Rx) and transmitting (Tx) states are detailed. The circuit theory is supported by the implementation of a demonstrator using an advanced integrated technology: 65-nm substrate on insulator (SOI) CMOS from STMicroelectronics. To the author’s best knowledge, it is the first implementation of such topology using an integrated CMOS technology. The demonstrator is designed considering a system-level tradeoff between the two states, in order to implement 28-GHz duplexers for 5G front-end modules (FEMs). The Rx state exhibits 1.9 dB of insertion loss, 24 dB of isolation and a 1 dB input compression point of 17.5 dBm, whereas the Tx state has 2.9 dB and 35 dB of insertion loss and isolation, respectively. Besides, the gain compression in the Tx state is lower than 0.3 dB, considering an input power of 18 dBm.

中文翻译：

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基于混合耦合器的集成 65 纳米 CMOS SOI Ka 波段非对称单刀双掷开关

这封信介绍了基于两个集成混合耦合器的非对称 Ka 波段单刀双掷 (SPDT) 开关的设计。详细介绍了该开关的工作原理及其两种非对称接收 (Rx) 和发射 (Tx) 状态。电路理论得到使用先进集成技术的演示器实施的支持：来自 STMicroelectronics 的 65 纳米绝缘体上衬底 (SOI) CMOS。据作者所知，这是首次使用集成 CMOS 技术实现此类拓扑。演示器的设计考虑了两种状态之间的系统级权衡，以便为 5G 前端模块 (FEM) 实施 28 GHz 双工器。Rx 状态表现出 1.9 dB 的插入损耗、24 dB 的隔离度和 17.5 dBm 的 1 dB 输入压缩点，而 Tx 状态的插入损耗和隔离度分别为 2.9 dB 和 35 dB。此外，考虑到 18 dBm 的输入功率，Tx 状态下的增益压缩低于 0.3 dB。