Group-IV alloys of Ge and/or Si with Sn are challenging to prepare due to the low solubility of Sn in both of these elements. Herein, we describe a remote plasma-enhanced chemical vapor deposition (RPECVD) system designed to synthesize such group-IV alloys. Thin films of Ge, Ge1−ySiy, Ge1−xSnx, and Ge1−x−ySiySnx were deposited in the range of 280−410 °C on Si (001) substrates utilizing a remote He plasma with downstream injected mixtures of SnCl4, SiH4, and/or GeH4 precursors. The composition and structural properties of these RPECVD films were characterized with x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. They were found to be crystalline, oriented with the substrate, and nearly relaxed due to the formation of an ∼5 nm thick interface layer with a high density of edge dislocations and stacking faults.

中文翻译：

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用于生长含锡 IV 族合金的远程等离子体增强化学气相沉积系统的设计

由于 Sn 在这两种元素中的溶解度低，因此制备 Ge 和/或 Si 与 Sn 的 IV 族合金具有挑战性。在此，我们描述了一种远程等离子体增强化学气相沉积 (RPECVD) 系统，旨在合成此类 IV 族合金。Ge、Ge1-ySiy、Ge1-xSnx 和 Ge1-x-ySiySnx 薄膜在 280-410 °C 范围内沉积在 Si (001) 衬底上，使用远程 He 等离子体和下游注入的 SnCl4、SiH4、和/或 GeH4 前体。这些 RPECVD 薄膜的组成和结构特性通过 x 射线衍射、透射电子显微镜和 x 射线光电子能谱进行了表征。发现它们是结晶的，与衬底一起取向，并且由于形成了约 5 nm 厚的界面层，具有高密度的边缘位错和堆垛层错，因此几乎处于松弛状态。