This article presents experimental and simulation studies on the formation of recombination‐active ring‐like defects during thermal donor (TD) formation at 450 °C in n‐type Czochralski‐grown silicon wafers. With increasing anneal duration from 1 to 24 h, the resistivity and interstitial oxygen concentration of samples decrease, consistent with the formation of TDs. However, after a subsequent TD annihilation treatment, the resistivity recovers completely, while the interstitial oxygen concentration recovers only partially. Furthermore, the wafers exhibit ring‐like defects in photoluminescence images after the TD generation and remain persistent even after annihilation treatment. By applying a tabula rasa (TR) treatment prior to TD generation anneals, the net loss of interstitial oxygen is reduced, and the incubation time of the ring‐like defects is extended in comparison to as‐grown wafers. Finally, to investigate the possibility of low‐temperature precipitation, simulation of oxygen precipitation (OP) kinetics during the 450 °C annealing steps is performed using an enhanced effective diffusivity of oxygen. These simulations demonstrate that OP can occur simultaneously during TD formation, resulting in recombination‐active ring‐like defects.

中文翻译：

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N型直拉生长硅晶圆中环状样缺陷的形成

本文介绍了在n型切克劳斯基（Czochralski）生长的硅晶片中在450°C下热施主（TD）形成过程中重组活性环状缺陷形成的实验和模拟研究。随着退火时间从1小时增加到24小时，样品的电阻率和间隙氧浓度降低，这与TD的形成一致。但是，在随后的TD hil灭处理之后，电阻率完全恢复，而间隙氧浓度仅部分恢复。此外，晶圆在TD生成后的光致发光图像中显示出环状缺陷，并且即使经过an灭处理也可以保持持久性。通过在TD产生退火之前进行烟灰比（TR）处理，可以减少组织间氧的净损失，与成膜的晶圆相比，环状缺陷的孵育时间得以延长。最后，为了研究低温沉淀的可能性，使用增强的氧气有效扩散率对450°C退火步骤中的氧气沉淀（OP）动力学进行了模拟。这些模拟表明，OP可以在TD形成过程中同时发生，从而导致复合活性环状缺陷。