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Raman Studies of Graphene Films Grown on 4 H -SiC Subjected to Deposition of Ni
Semiconductors ( IF 0.7 ) Pub Date : 2020-12-04 , DOI: 10.1134/s1063782620120064
I. A. Eliseyev , V. Yu. Davydov , A. N. Smirnov , S. V. Belov , A. V. Zubov , S. P. Lebedev , A. A. Lebedev

Abstract

Raman spectroscopy is used to evaluate the structural perfection of epitaxial graphene films before and after deposition of a Ni layer to their surface by magnetron sputtering. Two deposition modes with different gas pressures and deposition times are investigated. It is found that Ni deposition under low pressure combined with long deposition time does not lead to the separation of graphene/Ni film. On the other hand, higher pressure and shorter deposition time results in successful but uncontrollable exfoliation of graphene together with the Ni film. The results obtained will serve as the basis for the optimization of Ni deposition modes, in order to achieve complete exfoliation of the graphene film from the SiC substrate without damaging the graphene layer.



中文翻译:

Ni沉积在4 H -SiC上生长的石墨烯薄膜的拉曼研究

摘要

拉曼光谱法用于评估通过磁控溅射将Ni层沉积到其表面之前和之后的外延石墨烯薄膜的结构完善性。研究了两种具有不同气压和沉积时间的沉积方式。发现在低压下的Ni沉积与长的沉积时间相结合不会导致石墨烯/ Ni膜的分离。另一方面,较高的压力和较短的沉积时间导致石墨烯与Ni膜一起成功但不可控制地剥落。获得的结果将作为优化Ni沉积方式的基础,以便在不损坏石墨烯层的情况下从SiC衬底上完全剥离石墨烯膜。

更新日期:2020-12-04
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