当前位置:
X-MOL 学术
›
Semiconductors
›
论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Determination of the Quadrupole Splitting in Bulk n -GaAs by Warm-Up Spectroscopy
Semiconductors ( IF 0.7 ) Pub Date : 2020-12-04 , DOI: 10.1134/s1063782620120180 V. M. Litvyak , R. V. Cherbunin , V. K. Kalevich , K. V. Kavokin
中文翻译:
热光谱法测定n-GaAs体中四极分裂
更新日期:2020-12-04
Semiconductors ( IF 0.7 ) Pub Date : 2020-12-04 , DOI: 10.1134/s1063782620120180 V. M. Litvyak , R. V. Cherbunin , V. K. Kalevich , K. V. Kavokin
Abstract
We found bulk n-GaAs layers grown by liquid phase epitaxy to be irregularly stressed. Deformation created by this stress causes a small but detectable quadrupole splitting of Zeeman nuclear energy levels. In our work we detected a very weak quadrupole splitting for 69Ga and 75As isotopes in bulk n-GaAs and obtained the value of the sample deformation. To this end, we used a new method that we call warm-up spectroscopy of nuclear spins in weak external magnetic fields.
中文翻译:
热光谱法测定n-GaAs体中四极分裂
摘要
我们发现液相外延生长的大块n -GaAs层受到不规则的应力作用。由这种应力引起的变形会引起塞曼核能级小的但可检测的四极分裂。在我们的工作中,我们检测到n -GaAs体中69 Ga和75 As同位素的非常弱的四极分裂,并获得了样品变形的值。为此,我们使用了一种称为微弱外部磁场中的核自旋的热光谱的新方法。