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In‐depth analysis of an RCD snubber applied to a DC‐DC boost converter
International Journal of Circuit Theory and Applications ( IF 2.3 ) Pub Date : 2020-12-02 , DOI: 10.1002/cta.2911
Alexandre Rodrigues Vaz 1 , Fernando Lessa Tofoli 2
Affiliation  

Resistor‐capacitor‐diode (RCD) snubbers are traditionally used in practice aiming to maintain the stresses on semiconductors within safe operating limits. However, a serious drawback is the power lost in the resistor, which may affect the converter efficiency significantly. In this context, this work proposes a detailed procedure for the accurate design of an RCD snubber based on two additional key parameters that are not considered in typical guidelines provided in didactic books, that is, the forward recovery time of the main diode and the inductor current ripple. The impact of the maximum additional voltage spike on the switch is first assessed considering that it influences both the power dissipated in the snubber resistor and the current stresses on all semiconductors. A systematic optimization of the design is presented later on, considering that proper tradeoffs can be made among the type of main diode used in the converter, the maximum voltage spike on the switch, and the inductor current ripple as demonstrated mathematically. A dc‐dc boost converter operating in continuous conduction mode (CCM) is thoroughly analyzed so that is possible to derive a consistent methodology comprising all power stage elements. This study intends to shed new light on an old research topic, as well to investigate the snubber impact on the converter operation and overall performance. The effectiveness of the proposed approach is demonstrated experimentally employing a laboratory prototype rated at 200 W. The results clearly show that is possible to optimize the design as desired, with good overall performance over a wide load range considering all aforementioned aspects.

中文翻译:

对应用于DC-DC升压转换器的RCD缓冲器的深入分析

电阻-电容-二极管(RCD)缓冲器通常在实践中使用,目的是将半导体上的应力保持在安全的工作范围内。但是,一个严重的缺点是电阻器中的功率损耗,这可能会严重影响转换器效率。在这种情况下,这项工作基于两个附加的关键参数,为RCD缓冲器的精确设计提出了一个详细的程序,这两个基本参数在教学手册中提供的典型指南中没有考虑,即主二极管和电感器的正向恢复时间电流纹波。首先,考虑最大附加电压尖峰对开关的影响,因为它会影响缓冲电阻器中的功耗以及所有半导体上的电流应力,因此首先进行评估。稍后将对设计进行系统的优化,考虑到可以在转换器中使用的主二极管类型,开关上的最大电压尖峰以及电感器电流纹波之间进行适当的权衡,如数学上所示。对在连续导通模式(CCM)下工作的dc-dc升压转换器进行了全面分析,从而有可能推导出包含所有功率级元件的一致方法。这项研究旨在为一个古老的研究课题提供新的思路,并研究缓冲器对转换器操作和整体性能的影响。使用额定功率为200 W的实验室原型通过实验证明了该方法的有效性。结果清楚地表明,考虑到上述所有方面,可以在较宽的负载范围内实现理想的优化设计并具有良好的总体性能。
更新日期:2020-12-02
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