A novel optical secondary storage memory operated in the near‐infrared (NIR) region is developed through the integration of an apertureless scanning near‐field optical microscopy probe with the conventional Ge₂Sb₂Te₅ storage stack. The probe composite and the optical coefficients of the storage media stack, particularly for the indium tin oxide capping layer, are optimized according to a previously developed electromagnetic wave model, and a newly established density functional theory model, respectively. The dielectric core and the metal coating medium of the probe are devised to be glass and barium, respectively, to provide high electric field in the NIR region, while the thickness of the ITO capping layer is chosen to be 3 nm here to provide high optical transmittance simultaneously with exemption of complex fabrication process. The recording operation of the aforementioned optimized device is subsequently simulated by a newly established thermo‐optics model, and its feasibility of achieving ≥Tbit in⁻², 10⁸ bits per second, and picojoule energy consumption per bit is theoretically demonstrated.

中文翻译：

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使用近红外无孔扫描近场光学显微镜设计相变存储器

通过将无孔扫描近场光学显微镜探针与常规Ge ₂ Sb ₂ Te ₅集成在一起，开发了一种在近红外（NIR）区域中运行的新型光学二级存储存储器。存储堆栈。分别根据先前开发的电磁波模型和新建立的密度泛函模型，分别对探针复合材料和存储介质堆栈的光学系数进行了优化，尤其是对于氧化铟锡覆盖层而言。探针的介电芯和金属涂层介质分别设计为玻璃和钡，以在NIR区域提供高电场，而ITO覆盖层的厚度在此处选择为3 nm，以提供高光学性能。透射率高，同时无需复杂的制造工艺。上述优化的装置的记录操作随后由新建立的热光学模型，其在实现≥Tbit的可行性模拟^-2，10每秒⁸位，并且理论上证明了每位皮焦耳的能耗。