Abstract— Applying the nonequilibrium Green’s function (NEGF), we have compared the performance of InAs nanowire (NW) and its based superlattice MOSFET [ 16 ] under optical phonon absorption and emission. Our results indicate fluctuations in the nanowire (NW) characteristics like density of states (DOS), scattering rate, mobility, effective transmission and current. We applied the NEGF approach to show fluctuations in the nanowire (NW) parameters as a function of the energy. Electron phonon interactions and background effect are also taken into account through scattering self-energies in the self-consistent born approximation. The energy dependence of these oscillations allows us to deduce a coupling between electrons and the phonons. This analysis opens the door for InAs NWs as nano electromechanical devices, superlattice MOSFET and particularly, as phonon detectors.

中文翻译：

---

InAs 纳米线和 MOSFET 在声子发射和吸收下的性能使用 NEGF 形式化

摘要— 应用非平衡格林函数 (NEGF)，我们比较了 InAs 纳米线 (NW) 及其基超晶格 MOSFET [16] 在光学声子吸收和发射下的性能。我们的结果表明纳米线 (NW) 特性的波动，如态密度 (DOS)、散射率、迁移率、有效传输和电流。我们应用 NEGF 方法来显示作为能量函数的纳米线 (NW) 参数的波动。电子声子相互作用和背景效应也通过自洽天生近似中的散射自能来考虑。这些振荡的能量依赖性使我们能够推断出电子和声子之间的耦合。该分析为 InAs NW 作为纳米机电器件、超晶格 MOSFET 尤其是，