Abstract Hybrid InSb and GaSb nanostructures (NSs) with different repeated cycles; one, two and four, are inserted in double AlGaAs/GaAs heterostructures by molecular beam epitaxy in Stranski-Krastanov mode. Their morphologies and cross-sectional structure are inspected by atomic force microscopy and transmission electron microscopy. Raman spectroscopy reveals the effect of strains produced by the presence of InSb and GaSb NSs. Optical properties of hybrid InSb and GaSb NSs are investigated by power- and temperature-dependent photoluminescence (PL) spectroscopy. Broad and strong PL emission of hybrid NSs are observed from 20 K to room temperature. The Ohmic contacts are performed by gold alloys metallization and gold bonding on the p-n heterojunction devices for electrical current density-voltage characterization of the devices. Photovoltaic effect of hybrid quantum NS-devices with different NS-cycles are tested and recorded under various illumination intensities. Spectral response at long wavelength in infrared region beyond 1 μm originated from the presence of hybrid NSs is detected.

中文翻译：

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混合 InSb 和 GaSb 量子纳米结构的研究

摘要 具有不同重复循环的混合 InSb 和 GaSb 纳米结构 (NSs)；一、二和四通过分子束外延以 Stranski-Krastanov 模式插入双 AlGaAs/GaAs 异质结构中。通过原子力显微镜和透射电子显微镜检查它们的形态和横截面结构。拉曼光谱揭示了因 InSb 和 GaSb NSs 的存在而产生的应变的影响。通过功率和温度相关的光致发光 (PL) 光谱研究混合 InSb 和 GaSb NSs 的光学性质。从 20 K 到室温观察到混合 NSs 的广泛而强烈的 PL 发射。欧姆接触是通过金合金金属化和 pn 异质结器件上的金键合来实现的，用于器件的电流密度-电压表征。在各种光照强度下测试和记录具有不同 NS 周期的混合量子 NS 器件的光伏效应。检测到由于混合 NS 的存在而产生的超过 1 μm 红外区域的长波长光谱响应。