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Spontaneous Emission of a Semiconductor Quantum Dot without the Dipole Approximation
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.6 ) Pub Date : 2020-12-03 , DOI: 10.3103/s106833722004012x G. A. Muradyan , L. R. Arzumanyan , A. Zh. Muradyan
中文翻译:
没有偶极近似的半导体量子点的自发发射
更新日期:2020-12-03
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.6 ) Pub Date : 2020-12-03 , DOI: 10.3103/s106833722004012x G. A. Muradyan , L. R. Arzumanyan , A. Zh. Muradyan
Abstract
The spontaneous emission of a spherical semiconductor quantum dot is considered without using the dipole approximation. It is shown that the dipole-forbidden radiation of a shallow potential well with one electron level becomes more intense than the dipole-permitted radiation of a deeper potential well and that the potential deepening makes the dipole approximation closer. It is also shown that the cylindrically symmetric anisotropic radiation can be obtained from a spherical quantum dot if the direction of the quantization axis remains unchanged for the acts of photon emission.
中文翻译:
没有偶极近似的半导体量子点的自发发射
摘要
在不使用偶极近似的情况下,可以考虑球形半导体量子点的自发发射。结果表明,具有一个电子能级的浅势阱的禁止偶极子辐射比深势阱的允许偶极子辐射更强,并且势必加深使偶极子近似化。还显示出,如果对于光子发射的作用,量化轴的方向保持不变,则可以从球形量子点获得圆柱对称各向异性辐射。