Abstract

Nanocrystalline CdSe films on a frosted glass substrate are synthesized via hydrochemical deposition with sodium selenosulfate using an additive of 5 × 10^–4–10^–3 mol/L copper(II) chloride. It is found that introducing copper(II) chloride into the reaction mixture accelerates the formation of solid phase CdSe and thins the cadmium selenide layer from 240 to 130–160 nm. It is established that doping with copper does not affect the cubic B3 structure (space group \(F\bar {4}3m\)) of the CdSe film, but 10⁻³ mol/L copper(II) chloride in the reactor reduces the period of the crystal lattice from 0.59967 to 0.59899 nm, due to the formation of supersaturated substitutional solid solution Cu_xCd_1−xSe (x = 0.03). The band gap of the CdSe film, calculated according to light transmittance and diffuse reflectance, is 1.8 eV. Adding copper to the film lowers Е_g to 1.6 eV. It is shown that doping with copper results in luminescence in the near-IR spectral range (680–780 nm) and changes conductivity from the n to the p type.

中文翻译：

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铜掺杂纳米CdSe薄膜的形貌，结构和光学性质

摘要

通过使用5×10 ^–4 –10 ^–3 mol / L氯化铜（II）的添加剂与硒代硫酸钠通过水化学沉积合成了毛玻璃基板上的纳米晶CdSe膜。发现将氯化铜（II）引入反应混合物中会加速固相CdSe的形成，并使硒化镉层的厚度从240纳米减小到130-160纳米。已经确定，铜的掺杂不会影响CdSe膜的立方B 3结构（空间群\（F \ bar {4} 3m \）），而是会影响反应器中的10 ^-3 mol / L氯化铜（II）由于形成了过饱和替代固溶体Cu _x，将晶格的周期从0.59967减少到0.59899 nmCd _{1- x} Se（x = 0.03）。根据透光率和漫反射率计算出的CdSe膜的带隙为1.8eV。添加铜的膜降低Е_克至1.6电子伏特。结果表明，铜掺杂会在近红外光谱范围（680–780 nm）内发光，并将电导率从n型变为p型。