To clarify the behavior of the AlGaN in 20 nm wide Ga-rich current pathways in an n-AlGaN layer, which assists carrier localization in AlGaN-based light-emitting diodes, we performed a detailed analysis using an n-Al_0.7Ga_0.3N layer on AlN with dense macrosteps on a 1.0 miscut sapphire substrate. Energy-dispersive X-ray spectra, obtained using cross-sectional scanning transmission electron microscopy calibrated by Rutherford backscattering and cross-sectional cathodoluminescence spectra, indicated that AlN mole fraction in the Ga-rich current pathways was nearly ~2/3. This result is consistent with those of other research groups, suggesting that metastable Al_2/3Ga_1/3N is created in Ga-rich current pathways.

为了阐明AlGaN在n-AlGaN层中20 nm宽的富Ga电流通路中的行为，这有助于基于AlGaN的发光二极管中的载流子定位，我们使用n-Al _0.7 Ga _0.3 N进行了详细的分析在1.0误切蓝宝石衬底上的AlN层上具有密集的宏台阶。使用通过卢瑟福反向散射和横截面阴极发光光谱校准的横截面扫描透射电子显微镜获得的能量分散X射线光谱表明，富Ga电流通路中的AlN摩尔分数接近〜2/3。该结果与其他研究小组的结果一致，表明在富含Ga的电流通路中产生了亚稳态Al _2/3 Ga _1/ 3N。