This paper presents an efficient and stable green inverted organic light emitting diode (IOLED) using multifunctional and strong nucleophilic quality electron transport material (1,3-bis(2-phenyl-1,10-phenanthrolin-4-yl)benzene (m-bPPhenB)) with silver (Ag) as an n-dopant. By the energy level alignment study using in-situ ultraviolet photoelectron spectroscopy measurement, negligible electron injection barrier between indium tin oxide (ITO) and Ag-doped m-bPPhenB (Φ_e ≈ 0.03 eV) is observed and the electrons can be easily tunneled from ITO into Ag-doped m-bPPhenB layer. Also, Ag dopant forms coordination bonds with phenanthroline based unit, which improves electron injection from ITO. Fabricated IOLED devices using an Ag-doped m-bPPhenB have an extremely low driving voltage of 3.6 V and external quantum efficiency of 29.0%. Such good performances of IOLED are attributed to negligible electron injection barrier at the interface between ITO and Ag-doped m-bPPhenB. The Ag-doped IOLED device also shows a good air stability owing to the stable Ag n-dopant. The doping of Ag into special electron transport layer in the IOLED structure could be applicable to various displays and lighting applications.

提出一种有效且稳定的绿色倒置有机发光使用多官能和强亲核质量电子传输材料（1,3-二（2-苯基-1,10-菲咯啉-4-基）苯（二极管（IOLED）米- bPPhenB）），其中银（Ag）为正掺杂剂。通过使用能级排列研究原位紫外光电子能谱测量中，氧化铟锡（ITO）和之间具有可忽略的电子注入势垒的Ag掺杂米-bPPhenB（Φ _Ë  ≈0.03 eV）的观察和电子可以从能够容易地隧穿ITO成Ag掺杂的M-bPPhenB层。而且，Ag掺杂剂与基于菲咯啉的单元形成配位键，这改善了从ITO的电子注入。使用掺Ag的m -bPPhenB制成的IOLED器件具有3.6 V的极低驱动电压和29.0％的外部量子效率。IOLED的这种良好性能归因于在ITO和Ag掺杂的m -bPPhenB之间的界面上可忽略的电子注入势垒。由于稳定的Ag n掺杂剂，所以掺杂Ag的IOLED器件还显示出良好的空气稳定性。在IOLED结构中将Ag掺杂到特殊的电子传输层中可适用于各种显示器和照明应用。