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High-Performance n-type SnSe Thermoelectric Polycrystal Prepared by Arc-Melting
Cell Reports Physical Science ( IF 8.9 ) Pub Date : 2020-12-02 , DOI: 10.1016/j.xcrp.2020.100263
Javier Gainza , Federico Serrano-Sánchez , João E.F.S. Rodrigues , Yves Huttel , Oscar J. Dura , Michael M. Koza , María Teresa Fernández-Díaz , Juan J. Meléndez , Bence G. Márkus , Ferenc Simon , José Luis Martínez , José Antonio Alonso , Norbert M. Nemes

Tin selenide (SnSe) has notable thermoelectric properties, yet stable n-type polycrystalline SnSe is difficult to synthesize. Here, polycrystalline SnSe is easily prepared by arc-melting as robust pellets, with thermoelectric properties repeatably changing to negative Seebeck-coefficient above 580 K reaching a figure of merit ∼1.8 at 816 K. DC conductivity changes 4 orders of magnitude with temperature, whereas microwave conductivity increases only 4-fold, confirming the effects of oxidized grain boundaries. Effects of ambient oxygen exposure are probed by X-ray photoelectron spectroscopy. Neutron powder diffraction reveals 3% Sn deficiency. Inelastic neutron scattering shows phonon spectrum consistent with ab initio calculations and reported Raman spectra, but with higher-energy modes strongly softened at higher temperatures. We thereby provide insight on undoped n-type polycrystalline SnSe that reveals high-performance at high temperature, being a suitable peer material for p-type SnSe.



中文翻译:

电弧熔化制备高性能n型SnSe热电多晶

硒化锡(SnSe)具有显着的热电特性,但难以合成稳定的n型多晶SnSe。在这里,多晶SnSe可以很容易地通过电弧熔化制成坚固的球粒,热电性能在580 K时可重复变为580 K时的负塞贝克系数,在816 K时达到品质因数约1.8。微波电导率仅增加4倍,证实了氧化晶界的影响。通过X射线光电子能谱探测环境氧暴露的影响。中子粉末衍射显示3%的锡缺乏。非弹性中子散射显示声子光谱与从头算相符计算和报告的拉曼光谱,但在较高温度下具有较高能量的模式会强烈软化。因此,我们提供了对未掺杂的n型多晶SnSe的见解,该nSe多晶SnSe在高温下具有高性能,是p型SnSe的合适对等材料。

更新日期:2020-12-23
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