Abstract

The angular dependence of Raman scattering intensity in silicon nanocrystals has been measured. Silicon nanocrystals have been fabricated by annealing of a silicon layer amorphosized by ion implantation and can therefore be formed only in one ordered direction of the initial single crystal. It is found that the angular dependence of polarized components of Raman scattering intensity in nanocrystals differed from the known dependence for single crystals. The parameter characterizing this difference has been introduced and measured, and the relation between this parameter and the size of nanocrystals has been determined. Raman spectra have been analyzed for silicon and silicon nanocrystals in a configuration forbidden by selection rules. It is shown that in this configuration, the parameters of a spectral line are determined to a considerable extent by nonideality of the crystal lattice.

中文翻译：

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硅纳米晶体中拉曼散射的角相关性特征

摘要

已经测量了硅纳米晶体中拉曼散射强度的角度依赖性。硅纳米晶体已经通过对通过离子注入非晶化的硅层进行退火来制造，因此只能在初始单晶的一个有序方向上形成。已经发现，纳米晶体中拉曼散射强度的偏振分量的角度依赖性不同于单晶的已知依赖性。已经介绍和测量了表征这种差异的参数，并确定了该参数与纳米晶体尺寸之间的关系。已经针对选择规则所禁止的配置对硅和硅纳米晶体的拉曼光谱进行了分析。结果表明，在这种配置下，