In this paper, GaON with excellent photoelectrochemical (PEC) performance was adopted in PEC immunosensor for the first time. Based on CdS sensitized BiVO₄/GaON composite material, a label-free PEC immunosensor was successfully developed for determination of procalcitonin (PCT). Firstly, BiVO₄ nanoarray was prepared by electrodeposition. Then GaON was added to form the BiVO₄/GaON composite material, due to the greatly increasing charge transfer efficiency, the PEC signal increased by about 3 times. At last, CdS grew in situ on BiVO₄/GaON composite that further expanded the light absorption range and improved the light utilization, and the PEC signal further increased again. This PEC immunosensor has a good linear relationship of 0.1 pg mL⁻¹ - 50 ng mL⁻¹ and the detection limitation of 0.03 pg mL⁻¹ is calculated. Importantly, the BiVO₄/GaON/CdS immunosensor platform showed good specificity and stability, and serum sample analysis have been performed with satisfactory results.

本文首次将具有优异光电化学性能的GaON应用于PEC免疫传感器。基于CdS敏化的BiVO ₄ / GaON复合材料，成功开发了无标记的PEC免疫传感器，用于测定降钙素原（PCT）。首先，通过电沉积制备BiVO ₄纳米阵列。然后加入GaON形成BiVO ₄ / GaON复合材料，由于电荷转移效率大大提高，PEC信号增加了约3倍。最后，CdS在BiVO _4上就地生长/ GaON复合材料进一步扩大了光吸收范围并提高了光利用率，而PEC信号又再次增加。这种PEC免疫传感器具有良好的线性0.1皮克毫升关系^-1 - 50纳克毫升^-1和0.03微克毫升的检测限制^-1进行计算。重要的是，BiVO ₄ / GaON / CdS免疫传感器平台表现出良好的特异性和稳定性，并且进行了血清样品分析并获得令人满意的结果。