Microcraters on the silicon surface were fabricated with the help of a nanosecond pulsed laser. The features of microcraters fabricated with single laser pulse and pulse trains of various laser intensities were analyzed. In case of single pulse, the diameter and depth of micro-crater rise with the laser fluence and achieve saturation at higher laser intensities. For the range of fluence 62–122 J/cm², the mass of ablated material was in the range of 0.27 × 10⁻⁹–2.69 × 10⁻⁹ g/pulse. Numerically simulated temperature trends were compared with the measured crater depths. The influence of laser intensity on the target temperature and onset time to melt/boil were also investigated. In case of pulse trains, the reduction in material removal efficiency is attributed to the plume shielding and accumulation of ablated material on the crater walls. We demonstrated that the laser intensity and number of laser pulses can be used to control the morphology of a microcrater.

硅表面上的微坑是借助纳秒脉冲激光制造的。分析了由单个激光脉冲和各种激光强度的脉冲串制造的微坑的特征。在单脉冲情况下，微弹坑的直径和深度随激光通量的增加而增加，并在较高的激光强度下达到饱和。对于注量范围62–122 J / cm ²，烧蚀材料的质量范围为0.27×10 ^-9 –2.69×10 ^-9克/脉冲 将数值模拟的温度趋势与测得的火山口深度进行比较。还研究了激光强度对目标温度和熔化/沸腾开始时间的影响。在脉冲串的情况下，材料去除效率的降低归因于羽流屏蔽和烧蚀材料在火山口壁上的积聚。我们证明了激光强度和激光脉冲数可用于控制微坑的形态。