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High mobility germanium-on-insulator p-channel FinFETs
Science China Information Sciences ( IF 8.8 ) Pub Date : 2020-11-25 , DOI: 10.1007/s11432-019-2846-9
Huan Liu , Genquan Han , Jiuren Zhou , Yan Liu , Yue Hao

We fabricated and investigated the electrical characteristics of Ge pFinFET on (100)-oriented GeOI wafer. Transistors with fin channel along [110] direction demonstrate the improved drive current and channel ΔRtotLG compared to the devices along [100] direction. At a Qinv of 5 × 1012 cm−2, GeOI FinFETs along [110] direction have 60% and 10% improved μeff in comparison with [100] devices and Si university mobility, respectively.



中文翻译:

高迁移率绝缘体上锗p通道FinFET

我们在(100)取向的GeOI晶片上制造并研究了Ge ​​pFinFET的电学特性。与沿[100]方向的器件相比,具有沿[110]方向的鳍形通道的晶体管表现出改善的驱动电流和沟道ΔR tot / ΔL G。在一个Q INV的5×10 12厘米-2,沿[110]方向的GeOI FinFET的具有60%和10%改善的μ EFF与[100]的设备和Si大学迁移率,分别比较。

更新日期:2020-12-01
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