Irradiation grain growth of CeO₂ was studied using in-situ ion irradiation with transmission electron microscopy (TEM). Thin films of ceria were produced by electron beam physical vapor deposition (EB-PVD) and then irradiated at the Intermediate Voltage Electron Microscope (IVEM) with 1 MeV Kr²⁺ ions at temperatures of 400°C, 600°C, and 800°C. During irradiation at the elevated temperatures, the CeO₂ phase remained stable and its grains grew with irradiation. Grain growth was only weakly dependent on irradiation temperature between 400°C and 800°C. The grain growth kinetics were evaluated by a thermal spike model that was used to calculate the activation energy for grain growth.

使用透射电子显微镜（TEM）进行原位离子辐照研究了CeO ₂辐照晶粒的生长。通过电子束物理气相沉积（EB-PVD）制备二氧化铈薄膜，然后在400°C，600°C和800°C的温度下，用1 MeV Kr ²⁺离子在中压电子显微镜（IVEM）上辐照。C。在高温下照射期间，CeO ₂相保持稳定并且其晶粒随照射而生长。晶粒生长仅微弱地依赖于400°C至800°C之间的辐照温度。通过热峰值模型评估了晶粒生长动力学，该模型用于计算晶粒生长的活化能。