Abstract Tensile-strained InGaAs and GaAsSb layers have potential as strain-compensation layers for tunneling field-effect-transistors containing compressively strained InGaAs channel layers. Here, we compare structural and photoluminescence properties between 1% tensile-strained InGaAs and GaAsSb layers grown on InP substrates. Surface roughening on the GaAsSb layer with increasing layer thickness proceeded much more slowly than on the InGaAs layer. Differences in the morphological evolution between the InGaAs and GaAsSb layers were strongly reflected in the experimental results obtained by x-ray diffraction and photoluminescence measurements. Cross-sectional TEM observations revealed that surface morphologies of the InGaAs and GaAsSb layers depend on whether facets are formed on the surface or not.

中文翻译：

---

在 InP (001) 衬底上生长的拉伸应变 In0.39Ga0.61As 和 GaAs0.64Sb0.36 层之间的结构和光致发光特性的比较研究

摘要 拉伸应变 InGaAs 和 GaAsSb 层具有作为隧道场效应晶体管的应变补偿层的潜力，其中包含压缩应变 InGaAs 沟道层。在这里，我们比较了在 InP 衬底上生长的 1% 拉伸应变 InGaAs 和 GaAsSb 层之间的结构和光致发光特性。随着层厚度的增加，GaAsSb 层上的表面粗糙化进行得比 InGaAs 层上的要慢得多。通过 X 射线衍射和光致发光测量获得的实验结果强烈反映了 InGaAs 和 GaAsSb 层之间形态演变的差异。横截面 TEM 观察显示 InGaAs 和 GaAsSb 层的表面形态取决于表面是否形成小平面。