ZnO–SiO₂ composite films doped with La³⁺ ions (0.1%–5.0% mass.) were obtained using the sol–gel method. The absorption and ultraviolet luminescence spectra of the films, as well as the change in spectral characteristics under the influence of DNA, were studied. Doping of ZnO:SiO₂ films with La³⁺ ions leads to an increase in the transmittance in the UV range (λ = 357 nm) from 4.5% (for undoped films) to 32%–34%, and the transmittance is inversely proportional to the amount of dopant. In all doped films, the optical band gap increases in comparison with undoped films (3.35 eV) and amounts to 3.830–3.853 eV. The application of DNA to the surface weakly affects the value of optical band gap. The maximum of the ultraviolet luminescence (UVL) band in ZnO:SiO₂:La³⁺ films is slightly shifted depending on the amount of dopant and is located at λem = 363–367 nm. An increase in UVL intensity was observed upon doping by a factor of 8.4–9.6 compared to ZnO:SiO₂ films. A change in the amount of dopant does not lead to sharp changes in the magnitude of the intensity. Thus, the UVL intensity (λex = 260), compared with films with 0.1% La³⁺ content, varies by 5%–11%. The effect of small amounts of DNA was studied for films doped with La³⁺. In the case of ZnO:SiO₂:La³⁺, both extinguishing (up to 12%) and ignition (up to 5%) of UVL were observed. Monotone dependencies (which are desirable for the biosensor sensing element) were obtained for samples with La³⁺ 0.1 and 1.0% content. SEM images show that the images for zinc oxide are white crystallites of different sizes: from 0.5 m to conglomerates of crystallites −1 m. In the presence of DNA, the surface structure changes due to the formation of rhomboid structures, whose sizes vary from 3 m to 35 m. It is known that lanthanum ions induce the compaction of DNA with the formation of nanoscale structures.

使用溶胶-凝胶法获得了掺有La ³⁺离子（质量百分比为0.1％-5.0％）的ZnO-SiO ₂复合膜。研究了薄膜的吸收和紫外发光光谱，以及在DNA的影响下光谱特性的变化。用La ³⁺离子掺杂ZnO：SiO ₂薄膜会导致紫外线范围内的透射率增加（λ= 357 nm）从4.5％（对于未掺杂的薄膜）到32％–34％，并且透射率与掺杂剂的含量成反比。在所有掺杂的薄膜中，光学带隙与未掺杂的薄膜相比增加（3.35 eV），达到3.830–3.853 eV。将DNA施加到表面上对光学带隙的值影响很小。最大ZnO中紫外线发光（UVL）频带的玻璃含有SiO ₂：拉³⁺膜被稍微偏移取决于掺杂剂的量，并位于λ发射= 363-367纳米。与ZnO：SiO ₂薄膜相比，掺杂后观察到的UVL强度增加了8.4-9.6 。掺杂剂数量的变化不会导致强度大小的急剧变化。因此，UVL强度（λ EX = 260）中，用具有0.1％的La膜相比³⁺含量，5％-11％之间变化。对掺有La ^3+的薄膜研究了少量DNA的作用。在ZnO：SiO ₂：La ³⁺的情况下，观察到UVL熄灭（至多12％）和着火（至多5％）。对于La ³⁺含量为0.1％和1.0％的样品，获得了单调依赖性（对于生物传感器感测元件而言是理想的）。SEM图像显示氧化锌图像是大小不同的白色微晶：从0.5起m到微晶-1 米 在存在DNA的情况下，由于菱形结构的形成，其表面结构发生了变化，其大小从3m至35 米 众所周知，镧离子诱导DNA的紧缩并形成纳米级结构。