From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7–3.2 m wavelength range. From hydrostatic pressure measurements, the non-radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. We observe a minimum in the Auger rate around 2.1 m. A strong increase with decreasing mid-infrared wavelength (<2 m) indicates the prominent role of intervalence Auger transitions to the split-off hole band (CHSH process). Above 2 m, the increase with wavelength is approximately exponential due to CHCC or CHLH Auger recombination, limiting long wavelength operation. The observed dependence is consistent with that derived by analysing literature values of lasing thresholds for type-I InGaAsSb quantum well diodes. Over the wavelength range considered, the Auger coefficient varies from a minimum of 1 10⁻¹⁶cm ⁴ s⁻¹ at 2.1 m to ∼8 10⁻¹⁶cm⁴ s⁻¹ at 3.2 m.

通过对阈值电流密度随温度和静水压力变化的系统研究，结合对增益和阈值载流子密度的理论分析，我们确定了InGaAsSb / GaSb量子阱激光器发射的俄歇复合系数的波长依赖性在1.7–3.2中 米波长范围。通过静水压力测量，可以连续确定各个激光器的阈值电流的非辐射分量，该分量是波长的函数。分析结果以定量确定俄歇系数。此过程涉及根据设备属性，光学损耗和估计的俄歇（Auger）对总阈值电流密度的贡献来计算阈值载流子密度。我们观察到俄歇率最低约为2.1米 随着中红外波长（<2m）表明间隔俄歇过渡到分离的孔带（CHSH过程）的显著作用。2以上m，由于CHCC或CHLH Auger重组，随着波长的增加大约是指数的，从而限制了长波长操作。观察到的依赖性与通过分析I型InGaAsSb量子阱二极管的激光阈值的文献值得出的依赖性是一致的。在所考虑的波长范围内，俄歇系数在2.1的最小值1 10 ^-16 cm ⁴ s ^-1之间变化米至10〜8 ^-16厘米^4个小号^-1 3.2米