Based on a bistable mechanism, a novel low- ${g}$ MEMS inertial switch with dual functions of self-locking and reverse-unlocking is presented, along with its fabrication and verification. This MEMS switch is fabricated on a Silicon-On-Insulator (SOI) wafer by using deep reactive ion etching (DRIE), Bosch processing, and wafer bonding technologies. A two-level system is proposed to realize dual functions of this switch, which mainly consists of a spring-mass-damping system as the first level and a bistable structure as the second level. According to the finite element analysis (FEA), the theoretical formula of the bistable structure has been successfully verified to deduce the static mechanical properties. Under positive and negative acceleration excitations, the dynamic response characteristics of the switch has been systematically simulated further. Furthermore, this inertial switch has been tested by using a centrifugal acceleration turntable, and its self-locking threshold and reverse unlocking threshold are 8 ${g}$ and 105 ${g}$ , respectively. Finally, the contact resistance of this MEMS switch is measured about $0.75~\Omega $ by a probe station. [2020-0302]

中文翻译：

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一种具有自锁和反向解锁功能的新型低重力MEMS双稳态惯性开关

基于双稳态机制的新型低 ${g}$ 介绍了一种具有自锁和反向解锁双重功能的MEMS惯性开关，并进行了制作和验证。该 MEMS 开关采用深反应离子蚀刻 (DRIE)、博世工艺和晶片键合技术在绝缘体上硅 (SOI) 晶片上制造。提出了一种两级系统来实现该开关的双重功能，主要由作为第一级的弹簧-质量-阻尼系统和作为第二级的双稳态结构组成。根据有限元分析（FEA），成功验证了双稳态结构的理论公式，推导出静态力学性能。在正负加速度激励下，进一步系统地模拟了开关的动态响应特性。此外， ${g}$ 和 105 ${g}$ ， 分别。最后，测量该 MEMS 开关的接触电阻约为 $0.75~\Omega $ 通过探测站。[2020-0302]