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SiC-based high-gain DC–DC converters with fault ride-through capability
IET Power Electronics ( IF 2 ) Pub Date : 2020-11-30 , DOI: 10.1049/iet-pel.2020.0169
Gangavarapu Gurukumar 1 , M.V. Sai Krishna 1 , Kumaravel Sundaramoorthy 1 , Ebrahim Babaei 2, 3
Affiliation  

This study presents active switched passive network-based high-gain DC–DC converters. The active switched network is formulated using two inductors, one capacitor and two diodes. Hence, the network is named as a 2L–C–2D network. Using ten components, an asymmetric high-gain DC-DC converter is proposed. This converter achieves a gain of 29 at an 80% duty ratio. In the asymmetric converter structure by replacing the inductor by another 2L–C–2D network, the symmetric converter structure is proposed using 14 components. This converter structure achieves the gain of 49 at the same 80% duty ratio. Apart from increasing the voltage gain, the 2L–C–2D network helps to reduce the voltage and current stresses of the converter. The utilisation of two semiconductor switches in the proposed converter structures permits a fault ride-through capability even when any one of the switches fails. Operations of the converters in continuous conduction mode (CCM) and discontinuous conduction mode (DCM) are discussed, and the boundary condition between CCM and DCM is derived. To limit the effect of parasitic elements on the converter performance, SiC-based semiconductor devices are used in the 500 W hardware prototype. The maximum efficiency of 92.8% is achieved in the case of a symmetric converter.

中文翻译:

具有故障穿越功能的基于SiC的高增益DC-DC转换器

这项研究提出了基于有源开关无源网络的高增益DC-DC转换器。有源开关网络由两个电感,一个电容器和两个二极管组成。因此,该网络被称为2L–C–2D网络。提出了使用十个组件的非对称高增益DC-DC转换器。该转换器以80%的占空比实现29的增益。在通过用另一个2L–C–2D网络代替电感器的非对称转换器结构中,提出了使用14个组件的对称转换器结构。这种转换器结构在相同的80%占空比下实现了49的增益。除了增加电压增益之外,2L–C–2D网络还有助于降低转换器的电压和电流应力。在所提出的转换器结构中利用两个半导体开关即使在任何一个开关发生故障的情况下也具有故障穿越能力。讨论了转换器在连续导通模式(CCM)和不连续导通模式(DCM)下的操作,并推导了CCM和DCM之间的边界条件。为了限制寄生元件对转换器性能的影响,在500 W硬件原型中使用了基于SiC的半导体器件。在对称转换器的情况下,最高效率达到92.8%。500 W硬件原型中使用了基于SiC的半导体器件。在对称转换器的情况下,最高效率达到92.8%。500 W硬件原型中使用了基于SiC的半导体器件。在对称转换器的情况下,最高效率达到92.8%。
更新日期:2020-12-01
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