Flat cryogenic cells with a radiation source at one of the control (zero) electrodes create promising opportunities for studying the properties of charged accumulation layers in weakly conducting media. The question as to the origin of different relaxation times, short τ 0 or long τ ∞ ≫ τ 0, when the medium is exposed to a rectangular surge of the control voltage V g, remains relevant in this area. The existing, primarily numerical, analysis of the problem confirms that there is a hierarchy of relaxation times, but ignores the physical nature of the observed dispersion. A “self-similar” version of the accumulation layer’s adjustment to its stationary state is discussed. This scenario yields clear definitions of τ 0 and τ ∞ ≫ τ 0. A relationship between τ ∞ and V g is found. The pioneering significance that cryogenic data has in the experimental study of accumulation layer kinetics is noted.

中文翻译：

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低温电解质中的堆积层

在控制（零）电极之一具有辐射源的扁平低温电池为研究弱导电介质中带电积累层的特性创造了有希望的机会。关于不同弛豫时间（短 τ 0 或长 τ ∞ ≫ τ 0）的起源的问题，当介质暴露于控制电压 V g 的矩形浪涌时，仍然与该领域相关。对该问题的现有主要是数值分析证实存在弛豫时间的层次，但忽略了观察到的色散的物理性质。讨论了累积层调整到其静止状态的“自相似”版本。这种情况产生了 τ 0 和 τ ∞ ≫ τ 0 的明确定义。发现了 τ ∞ 和 V g 之间的关系。