A long standing obstacle to realizing highly sought on-chip monolithic solid state quantum optical circuits has been the lack of a starting platform comprising scalable spatially ordered and spectrally uniform on-demand single photon sources (SPSs) buried under a planar surface. In this paper, we report on the first realization of planarized SPS arrays based on a unique class of shape-controlled single quantum dots (SQDs) synthesized on mesa top (dubbed MTSQDs) using substrate-encoded size-reducing epitaxy (SESRE) on spatially regular arrays of patterned nanomesas with edge orientation chosen to drive symmetric adatom migration from the nanomesa sidewalls to the top, thereby enabling spatially selective growth. Specifically, on GaAs(001) square nanomesas with edges along $⟨100⟩$, we synthesized binary GaAs/InAs/GaAs MTSQDs emitting around 1120 nm with 1.8 nm standard deviation and single photon emission purity >99.5%. SESRE based MTSQDs are shown for the first time to lend themselves to planarization of the surface morphology when grown on pedestal shape mesas. We demonstrate that the planarizing overgrowth process over arrays of InGaAs SQDs largely maintains the SQDs’ high single photon emission purity (>98%) and spectral uniformity (∼5 nm). Such planarized SQD arrays offer the long-sought platform for on-chip integration with light manipulating structures to realize quantum optical circuits.

中文翻译：

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光谱均匀的单个量子点的平面空间规则阵列，作为量子光学电路的芯片上单光子源

实现高度寻求的片上单片固态量子光学电路的长期障碍是缺乏一个包括可扩展的空间有序且光谱均匀的按需单光子源（SPS）掩埋在平面下的启动平台。在本文中，我们报告了基于在空间台上使用基底编码的尺寸缩小外延（SESRE）在台面顶部合成的独特类形控单量子点（SQD）（称为MTSQD）的平面化SPS阵列的首次实现选择规则的带边缘取向的图案化纳米面阵列，以驱动对称的原子从纳米面侧壁向顶部迁移，从而实现空间选择性生长。具体而言，在GaAs（001）正方形纳米台面上，其边缘沿$⟨100⟩$，我们合成了在1120 nm左右发射，标准偏差为1.8 nm和单光子发射纯度> 99.5％的二元GaAs / InAs / GaAs MTSQD。首次显示了基于SESRE的MTSQD，以使其在基座形状台面上生长时可以使表面形态平坦化。我们证明，InGaAs SQD阵列上的平面化过度生长过程在很大程度上保持了SQD的高单光子发射纯度（> 98％）和光谱均匀性（〜5 nm）。这种平面化的SQD阵列为与光处理结构的芯片上集成提供了长期寻求的平台，以实现量子光电路。