The development of transparent and high‐performance p‐type semiconductors as a counterpart of n‐type metal oxide semiconductors has attracted significant interest for the integration of complementary circuits and p–n junction devices. This study investigates the effect of trace O₂ for high‐performance and solution‐processed inorganic p‐channel Zn‐doped copper iodide (CuI) thin‐film transistors (TFTs) via a combined computation–experiment approach. The absorbed O₂ molecules in the CuI film can occupy iodine vacancies, acting as trap passivator. Meanwhile, the strong electronegativity of O₂ enables electron capture from the CuI matrix, leading to p‐doping. Trace O₂‐treated Zn‐doped CuI TFTs exhibit significantly improved electrical performance compared to untreated devices. Optimized TFTs exhibit a high field‐effect hole mobility of 4.4 cm² V⁻¹ s⁻¹, high on/off current ratio of ≈10⁷, and small hysteresis. These findings provide a clear basis for realizing reproducible and high‐performance metal‐halide (e.g., CuI and perovskite) optoelectronic devices using low‐cost solution process.

中文翻译：

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微量氧处理对高性能Zn掺杂CuI p沟道晶体管的关键作用

与n型金属氧化物半导体相对应的透明，高性能p型半导体的开发引起了对互补电路和p–n结器件集成的极大兴趣。本研究通过组合的计算实验方法研究了痕量O ₂对高性能和溶液处理的无机p通道掺杂锌的碘化铜（CuI）薄膜晶体管（TFT）的影响。CuI膜中吸收的O ₂分子可以占据碘空位，用作陷阱钝化剂。同时，O ₂的强电负性使电子能够从CuI基质中捕获，从而导致p掺杂。痕量O ₂与未处理的器件相比，经处理的掺杂Zn的CuI TFT具有更好的电性能。优化的TFT表现出4.4厘米高的场效应空穴迁移率² V ^-1小号^-1，高开/关的≈10电流比⁷，和小的滞后。这些发现为使用低成本解决方案工艺实现可复制且高性能的金属卤化物（例如CuI和钙钛矿）光电器件提供了明确的基础。