In this paper two‐terminal memristive devices are presented with a structure of aluminum/polyimide‐molybdenumdisulfide quantum dot (QD) nanocomposite/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate)/indium tin oxide that exhibits the characteristics of write‐once‐read‐many times in the range of applied voltages from −6 to 3 V. The operating voltage of the device is as low as 1.4 V, and the ON/OFF ratio of 3 × 10³ can be maintained for retention times larger than 3 × 10⁴ s. No significant variation in the current–voltage (I–V) curves of the devices is observed under high annealing temperatures of 50, 100, and 200 °C, which is indicative of their excellent thermal stability. The conduction mechanisms of the devices in their high and low resistance states are described by fitting the I–V curves of the devices.

中文翻译：

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基于聚酰亚胺二硫化钼量子点的高度稳定，一次写入多次读取的忆阻器件的存储机制

本文提出了一种具有铝/聚酰亚胺-二硫化钼钼量子点（QD）纳米复合材料/聚（3,4-乙撑二氧噻吩）-聚（苯乙烯磺酸盐）/氧化铟锡氧化物结构的二端忆阻器件。在-6至3 V的施加电压范围内，可多次读取。该器件的工作电压低至1.4 V，开/关比可保持3×10 ^3，从而保持时间更长大于3×10 ⁴ s。电流-电压（I – V）曲线在50、100和200°C的高退火温度下观察到，这表明它们具有出色的热稳定性。通过拟合器件的I – V曲线来描述处于高阻状态和低阻状态的器件的传导机制。