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A Phasor Analysis Method for Charge-Controlled Memory Elements
International Journal of Bifurcation and Chaos ( IF 2.2 ) Pub Date : 2020-11-27 , DOI: 10.1142/s0218127420300414
Zhang Guo 1, 2 , Herbert H. C. Iu 2 , Gangquan Si 1 , Xiang Xu 1 , Babajide Oluwatosin Oresanya 1 , Yiyuan Bie 1
Affiliation  

Memory elements, including memristor, memcapacitor, meminductor and second-order memristor, have been widely exploited recently to realize circuit systems for a broad scope of applications. This paper introduces a phasor analysis method for memory elements to help with the understanding of the complex nonlinear phenomena in circuits with memory elements. With the proposed method, all different memory elements could be described in a unified form and the series-connected circuit with memristor, memcapacitor, meminductor and second-order memristor could be simply modeled as one variable [Formula: see text]. Thus, the phasor vectors provided a way to conveniently calculate the [Formula: see text]–[Formula: see text] relation of different memory elements and to clearly understand the similarities and differences between all memory elements. Then some interesting phenomena were introduced when combining different memory elements. Moreover, a specific [Formula: see text] with certain [Formula: see text]–[Formula: see text] relations could be easily obtained with the method. And through the inverse calculation, the specific [Formula: see text] could be decomposed to a certain combination of memory elements. Meanwhile, the parameters of [Formula: see text] in the phasor domain were analyzed. Furthermore, the frequency characteristic for a [Formula: see text] circuit could be easily analyzed with the method and a particular series resonance was introduced.

中文翻译:

一种电荷控制存储元件的相量分析方法

记忆元件,包括忆阻器、记忆电容器、记忆电感器和二阶忆阻器,最近已被广泛用于实现广泛应用的电路系统。本文介绍了一种存储元件的相量分析方法,以帮助理解带有存储元件的电路中复杂的非线性现象。使用所提出的方法,所有不同的存储元件都可以以统一的形式描述,并且具有忆阻器、忆电容器、忆电感器和二阶忆阻器的串联电路可以简单地建模为一个变量[公式:见正文]。因此,相量向量提供了一种方便计算不同记忆元素的[公式:见正文]-[公式:见正文]关系的方法,并清楚地了解所有记忆元素之间的异同。然后在结合不同的记忆元素时引入了一些有趣的现象。此外,通过该方法可以很容易地获得特定的[公式:见文本]与一定的[公式:见文本]-[公式:见文本]关系。并且通过逆计算,可以将具体的【公式:见正文】分解为一定的记忆元素组合。同时,对相量域[公式:见正文]的参数进行了分析。此外,使用该方法可以很容易地分析[公式:见正文]电路的频率特性,并引入了特定的串联谐振。并且通过逆计算,可以将具体的【公式:见正文】分解为一定的记忆元素组合。同时,对相量域[公式:见正文]的参数进行了分析。此外,使用该方法可以很容易地分析[公式:见正文]电路的频率特性,并引入了特定的串联谐振。并且通过逆计算,可以将具体的【公式:见正文】分解为一定的记忆元素组合。同时,对相量域[公式:见正文]的参数进行了分析。此外,使用该方法可以很容易地分析[公式:见正文]电路的频率特性,并引入了特定的串联谐振。
更新日期:2020-11-27
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