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Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2020-11-26 , DOI: 10.1002/pssa.202000457
Boyuan Feng 1, 2 , Zhengcheng Li 1, 2 , Feiyu Cheng 2 , Leilei Xu 2 , Tong Liu 2 , Zengli Huang 2 , Fangsen Li 2 , Jiagui Feng 2 , Xiao Chen 2 , Ying Wu 2 , Gaohang He 2 , Sunan Ding 1, 2
Affiliation  

Growth mechanism and temperature of monoclinic gallium oxide (β‐Ga2O3) films grown by ozone molecular beam epitaxy (MBE) are investigated herein. Phase‐pure ( 2 ¯ 01 ) β‐Ga2O3 films can be grown on c‐plane sapphire substrates when the growth temperature exceeds 500 °C, and the grain size increases with the increase in the growth temperature. Sixfold rotational domains are obtained based on the epitaxial relationships (Ga2O3 < 010>//Al2O3< 1 1 ¯ 00 > and Ga2O3 < 102>//Al2O3 < 11 2 ¯ 0>). For the film grown at 700 °C, the threefold facets are observed for the first time, which are resulted from the easy‐cleaved (100) plane and rotational domains. In addition, the cathodoluminescence spectra of the β‐Ga2O3 films show that the proportion of ultraviolet emission increases with the increase in the growth temperature, which is attributed to the modulation of defect. Finally, the growth rate can be modulated by the ratio of Ga flux and ozone pressure. A reference is provided for heteroepitaxy of β‐Ga2O3 films and better understanding of the ozone MBE growth mechanism of oxides.

中文翻译:

臭氧分子束外延研究c平面蓝宝石衬底上β-Ga2O3薄膜的生长机理

生长机理和单斜晶氧化镓(β-Ga中温度2 ö 3由臭氧分子束外延(MBE)生长的)薄膜在本文中研究。纯相( 2 ¯ 01 )的β-Ga 2层ö 3薄膜可以上生长Ç -平面蓝宝石衬底上时,生长温度超过500℃,并且在生长温度的增加晶粒尺寸增大。根据外延关系获得六倍旋转域(Ga 2 O 3  <010> // Al 2 O 3 < 1个 1个 ¯ 00 >和Ga 2 O 3  <102> // Al 2 O 3  <11 2 ¯ 0>)。对于在700°C下生长的薄膜,首次观察到三重刻面,这是由于容易劈开的(100)平面和旋转域造成的。此外,β-Ga构成的阴极发光光谱2 ö 3层膜表明,与增加生长温度,这归因于缺陷的调制紫外发射的比例增加。最后,可以通过Ga通量和臭氧压力的比率来调节生长速率。的引用被设置为的β-Ga的异质外延2层ö 3薄膜和更好地理解氧化物的臭氧MBE生长机制。
更新日期:2020-11-26
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