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Optical response of plasma processed quantum dot under the external fields
International Journal of Quantum Chemistry ( IF 2.2 ) Pub Date : 2020-11-27 , DOI: 10.1002/qua.26564
Kadir Kılıç 1 , Mustafa Kemal Bahar 2
Affiliation  

We investigate theoretically the total refractive index changes (TRICs) and the total absorption coefficients (TACs) of two‐electron Gaussian quantum dot (TEGQD) including Gaussian potential confinement generated by GaAs/GaAlAs heterostructure, embedded in Debye and quantum plasma environments modeled by the more general exponential cosine screened Coulomb (MGECSC) potential, under the influence of the external electric and magnetic field. The wave equation is solved within the effective mass approach framework by using Runge–Kutta–Fehlberg method in order to obtain the subband spectra and the electronic wave functions of TEGQD. Nonlinear optical response of TEGQD is obtained through the compact‐density‐matrix formalism within the iterative method. The effects of both Debye and quantum plasma environments in the strong and weak regimes of the external fields are considered and compared throughout the study. The potents of the external electric field, the external magnetic field, the quantum dot width, the barrier height, and the plasma screening on TRICs and TACs resonant frequencies and amplitudes are analyzed. In addition to these analyses, the alternatives to each parameter effects of the model are also elucidated. TRICs and TACs analyze are carried out in a plasma‐free environment, and thus the function of environments with plasma compared to that without plasma is better explained. Thanks to all these reviews, it is elucidated how to and at what ranges perform in terms of the incident photon energy of TEGQD's optimum for TRICs and TACs characters by using plasma, and in which cases it will be an alternative to the external field and geometrical encompassing.

中文翻译:

等离子体处理的量子点在外场下的光学响应

我们从理论上研究了嵌入Gaby / GaAlAs异质结构,嵌入在Debye和量子等离子环境中的两电子高斯量子点(TEGQD)的总折射率变化(TRICs)和总吸收系数(TACs),包括GaAs / GaAlAs异质结构产生的高斯势垒。在外部电场和磁场的影响下,更通用的指数余弦屏蔽库仑(MGECSC)电势。通过使用Runge-Kutta-Fehlberg方法在有效质量方法框架内求解波动方程,以获得TEGQD的子带频谱和电子波函数。TEGQD的非线性光学响应是通过迭代方法中的紧致密度矩阵形式获得的。在整个研究过程中,考虑并比较了德拜和量子等离子体环境在外部场强和弱态下的影响。分析了外部电场,外部磁场,量子点宽度,势垒高度以及等离子体对TRIC和TAC谐振频率和幅度的屏蔽作用。除了这些分析之外,还阐明了模型每个参数效果的替代方法。TRIC和TAC的分析是在无等离子体的环境中进行的,因此与没有等离子体的环境相比,具有等离子体的环境的功能得到了更好的解释。感谢所有这些评论,通过使用等离子体,阐明了TEGQD针对TRIC和TAC字符的最佳TEGQD入射光子能量的工作方式和范围。
更新日期:2020-11-27
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